Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

C. C. Wu, C. I. Wu, J. C. Sturm, A. Kahn

Research output: Contribution to journalArticle

707 Scopus citations

Abstract

We demonstrate the improvement of an indium tin oxide anode contact to an organic light emitting device via oxygen plasma treatment. Enhanced hole-injection efficiency improves dramatically the performance of single-layer doped-polymer devices: the drive voltage drops from >20 to <10 V, the external electroluminescence quantum efficiency (backside emission only) increases by a factor of 4 (from 0.28% to 1%), a much higher drive current can be applied to achieve a much higher brightness (maximum brightness ∼10,000 cd/m2 at 1000 mA/cm2), and the forward-to-reverse bias rectification ratio increases by orders of magnitude (from 102 to 106-107). The lifetime of the device is also enhanced by two orders of magnitude.

Original languageEnglish (US)
Pages (from-to)1348-1350
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number11
DOIs
StatePublished - Mar 17 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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