SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).
- C. B. Duke
- , R. J. Meyer
- , A. Paton
- , J. L. Yeh
- , J. C. Tsang
- , Antoine Kahn
- , P. Mark
Research output: Contribution to journal › Conference article › peer-review
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