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SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).
C. B. Duke, R. J. Meyer, A. Paton, J. L. Yeh, J. C. Tsang, Antoine Kahn, P. Mark
Research output: Contribution to journal › Conference article › peer-review
18
Scopus
citations