The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1979|
|Event||Proc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA|
Duration: Oct 1 1979 → Oct 5 1979
All Science Journal Classification (ASJC) codes