SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

C. B. Duke, R. J. Meyer, A. Paton, J. L. Yeh, J. C. Tsang, Antoine Kahn, P. Mark

Research output: Contribution to journalConference article

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Abstract

The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

Original languageEnglish (US)
Pages (from-to)501-505
Number of pages5
JournalJournal of vacuum science & technology
Volume17
Issue number1
DOIs
StatePublished - Jan 1 1979
EventProc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA
Duration: Oct 1 1979Oct 5 1979

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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