SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

C. B. Duke; R. J. Meyer; A. Paton; J. L. Yeh; J. C. Tsang; Antoine Kahn; P. Mark

doi:10.1116/1.570494

SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

C. B. Duke, R. J. Meyer, A. Paton, J. L. Yeh, J. C. Tsang, Antoine Kahn, P. Mark

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

Original language	English (US)
Pages (from-to)	501-505
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	17
Issue number	1
DOIs	https://doi.org/10.1116/1.570494
State	Published - 1979
Event	Proc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA Duration: Oct 1 1979 → Oct 5 1979

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1116/1.570494

Cite this

@article{c8420796f09b4d9aa3a97c058f810b65,

title = "SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).",

abstract = "The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.",

author = "Duke, {C. B.} and Meyer, {R. J.} and A. Paton and Yeh, {J. L.} and Tsang, {J. C.} and Antoine Kahn and P. Mark",

year = "1979",

doi = "10.1116/1.570494",

language = "English (US)",

volume = "17",

pages = "501--505",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics",

number = "1",

note = "Proc of the Natl Symp of the Am Vac Soc, 26th ; Conference date: 01-10-1979 Through 05-10-1979",

}

TY - JOUR

T1 - SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS

T2 - Proc of the Natl Symp of the Am Vac Soc, 26th

AU - Duke, C. B.

AU - Meyer, R. J.

AU - Paton, A.

AU - Yeh, J. L.

AU - Tsang, J. C.

AU - Kahn, Antoine

AU - Mark, P.

PY - 1979

Y1 - 1979

N2 - The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

AB - The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

UR - http://www.scopus.com/inward/record.url?scp=0018335404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018335404&partnerID=8YFLogxK

U2 - 10.1116/1.570494

DO - 10.1116/1.570494

M3 - Conference article

AN - SCOPUS:0018335404

SN - 0022-5355

VL - 17

SP - 501

EP - 505

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 1

Y2 - 1 October 1979 through 5 October 1979

ER -

SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this