SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

C. B. Duke; R. J. Meyer; A. Paton; J. L. Yeh; J. C. Tsang; Antoine Kahn; P. Mark

doi:10.1116/1.570494

SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

C. B. Duke, R. J. Meyer, A. Paton, J. L. Yeh, J. C. Tsang, Antoine Kahn, P. Mark

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

Original language	English (US)
Pages (from-to)	501-505
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	17
Issue number	1
DOIs	https://doi.org/10.1116/1.570494
State	Published - 1979
Event	Proc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA Duration: Oct 1 1979 → Oct 5 1979

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1116/1.570494

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title = "SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).",

abstract = "The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.",

author = "Duke, {C. B.} and Meyer, {R. J.} and A. Paton and Yeh, {J. L.} and Tsang, {J. C.} and Antoine Kahn and P. Mark",

year = "1979",

doi = "10.1116/1.570494",

language = "English (US)",

volume = "17",

pages = "501--505",

journal = "Journal of Vacuum Science and Technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "1",

note = "Proc of the Natl Symp of the Am Vac Soc, 26th ; Conference date: 01-10-1979 Through 05-10-1979",

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TY - JOUR

T1 - SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS

T2 - Proc of the Natl Symp of the Am Vac Soc, 26th

AU - Duke, C. B.

AU - Meyer, R. J.

AU - Paton, A.

AU - Yeh, J. L.

AU - Tsang, J. C.

AU - Kahn, Antoine

AU - Mark, P.

PY - 1979

Y1 - 1979

N2 - The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

AB - The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.

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U2 - 10.1116/1.570494

DO - 10.1116/1.570494

M3 - Conference article

AN - SCOPUS:0018335404

SN - 0022-5355

VL - 17

SP - 501

EP - 505

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

IS - 1

Y2 - 1 October 1979 through 5 October 1979

ER -

SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS: InSb(110) AND ITS COMPARISON WITH GaAs(110) AND ZnTe(110).

Abstract

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