Abstract
The first determination of the atomic geometry of the (110) surface of InSb is reported. The structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 150 K. The structure is analogous to that of covalently bonded GaAs(110) but different from that of ZnTe(110) which exhibits a more ionic bonding. It is concluded that highly covalent zincblende-structure compound semiconductors exhibit reconstructions of their (110) surfaces characterized by (1) large bond rotations in the uppermost layer, with the anion moving outward and cation inward, (2) small bond-length alterations (i. e. , a few percent or less), and (3) distortions from the bulk geometry which penetrate at least two atomic layers in from the surface.
Original language | English (US) |
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Pages (from-to) | 501-505 |
Number of pages | 5 |
Journal | Journal of vacuum science & technology |
Volume | 17 |
Issue number | 1 |
DOIs | |
State | Published - 1979 |
Event | Proc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA Duration: Oct 1 1979 → Oct 5 1979 |
All Science Journal Classification (ASJC) codes
- General Engineering