SUPREM 3. 5, PROCESS MODELING OF GALLIUM ARSENIDE.

M. D. Deal; S. E. Hansen; R. Anholt; S. Chou; J. D. Plummer; R. W. Dutton; T. W. Sigmon; D. A. Stevenson; C. R. Helms; J. C. Bravman

doi:10.1109/iedm.1987.191403

SUPREM 3. 5, PROCESS MODELING OF GALLIUM ARSENIDE.

M. D. Deal, S. E. Hansen, R. Anholt, S. Chou, J. D. Plummer, R. W. Dutton, T. W. Sigmon, D. A. Stevenson, C. R. Helms, J. C. Bravman

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

A computer program has been developed to simulate processes used to manufacture digital GaAs integrated circuits. The processes modeled in this first version of the simulator include ion implantation, diffusion, and activation. The simulator includes a routine to calculate threshold voltage for a MESFET or JFET based on the simulated processing results and on substrate properties. Parameters for the models were derived from an extensive number of implantation and diffusion experiments, the major results of which are presented.

Original language	English (US)
Pages (from-to)	256-259
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1987.191403
State	Published - 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/iedm.1987.191403

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title = "SUPREM 3. 5, PROCESS MODELING OF GALLIUM ARSENIDE.",

abstract = "A computer program has been developed to simulate processes used to manufacture digital GaAs integrated circuits. The processes modeled in this first version of the simulator include ion implantation, diffusion, and activation. The simulator includes a routine to calculate threshold voltage for a MESFET or JFET based on the simulated processing results and on substrate properties. Parameters for the models were derived from an extensive number of implantation and diffusion experiments, the major results of which are presented.",

author = "Deal, {M. D.} and Hansen, {S. E.} and R. Anholt and S. Chou and Plummer, {J. D.} and Dutton, {R. W.} and Sigmon, {T. W.} and Stevenson, {D. A.} and Helms, {C. R.} and Bravman, {J. C.}",

year = "1987",

doi = "10.1109/iedm.1987.191403",

language = "English (US)",

pages = "256--259",

journal = "Technical Digest - International Electron Devices Meeting",

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T1 - SUPREM 3. 5, PROCESS MODELING OF GALLIUM ARSENIDE.

AU - Deal, M. D.

AU - Hansen, S. E.

AU - Anholt, R.

AU - Chou, S.

AU - Plummer, J. D.

AU - Dutton, R. W.

AU - Sigmon, T. W.

AU - Stevenson, D. A.

AU - Helms, C. R.

AU - Bravman, J. C.

PY - 1987

Y1 - 1987

N2 - A computer program has been developed to simulate processes used to manufacture digital GaAs integrated circuits. The processes modeled in this first version of the simulator include ion implantation, diffusion, and activation. The simulator includes a routine to calculate threshold voltage for a MESFET or JFET based on the simulated processing results and on substrate properties. Parameters for the models were derived from an extensive number of implantation and diffusion experiments, the major results of which are presented.

AB - A computer program has been developed to simulate processes used to manufacture digital GaAs integrated circuits. The processes modeled in this first version of the simulator include ion implantation, diffusion, and activation. The simulator includes a routine to calculate threshold voltage for a MESFET or JFET based on the simulated processing results and on substrate properties. Parameters for the models were derived from an extensive number of implantation and diffusion experiments, the major results of which are presented.

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U2 - 10.1109/iedm.1987.191403

DO - 10.1109/iedm.1987.191403

M3 - Conference article

AN - SCOPUS:0023541356

SN - 0163-1918

SP - 256

EP - 259

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

SUPREM 3. 5, PROCESS MODELING OF GALLIUM ARSENIDE.

Abstract

All Science Journal Classification (ASJC) codes

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