Suppression of microwave rectification effects in electrically detected magnetic resonance measurements

C. C. Lo, F. R. Bradbury, A. M. Tyryshkin, C. D. Weis, J. Bokor, T. Schenkel, Stephen Aplin Lyon

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Spin-dependent transport properties of micro- and nano-scale electronic devices are commonly studied by electrically detected magnetic resonance (EDMR). However, the applied microwave fields in EDMR experiments can induce large rectification effects and result in perturbations of the device bias conditions and excessive noise in the EDMR spectra. Here we examine rectification effects of silicon metal-oxide-semiconductor field-effect transistors exposed to X-band microwave irradiation and show that the rectification effects can be effectively suppressed by incorporating a global capacitive shunt covering the device. We demonstrate that the signal-to-noise ratio in the EDMR spectra improves by over a factor of ten in the shunted devices.

Original languageEnglish (US)
Article number063510
JournalApplied Physics Letters
Volume100
Issue number6
DOIs
StatePublished - Feb 6 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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