Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layers

Loren Pfeiffer; G. K. Celler; T. Kovacs; McD Robinson

doi:10.1063/1.94231

Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO₂ layers

Loren Pfeiffer
, G. K. Celler
, T. Kovacs
, McD Robinson

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We observe a marked suppression in the formation of low angle grain boundaries (sub-boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO₂. For 27-μm-thick Si films, areas exceeding 1×1 mm² have been recrystallized on SiO₂ which are completely free of grain boundaries and sub-boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO₂ interfaces.

Original language	English (US)
Pages (from-to)	1048-1050
Number of pages	3
Journal	Applied Physics Letters
Volume	43
Issue number	11
DOIs	https://doi.org/10.1063/1.94231
State	Published - 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.94231

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title = "Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layers",

abstract = "We observe a marked suppression in the formation of low angle grain boundaries (sub-boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO2. For 27-μm-thick Si films, areas exceeding 1×1 mm2 have been recrystallized on SiO2 which are completely free of grain boundaries and sub-boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO2 interfaces.",

author = "Loren Pfeiffer and Celler, \{G. K.\} and T. Kovacs and McD Robinson",

year = "1983",

doi = "10.1063/1.94231",

language = "English (US)",

volume = "43",

pages = "1048--1050",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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T1 - Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layers

AU - Pfeiffer, Loren

AU - Celler, G. K.

AU - Kovacs, T.

AU - Robinson, McD

PY - 1983

Y1 - 1983

N2 - We observe a marked suppression in the formation of low angle grain boundaries (sub-boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO2. For 27-μm-thick Si films, areas exceeding 1×1 mm2 have been recrystallized on SiO2 which are completely free of grain boundaries and sub-boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO2 interfaces.

AB - We observe a marked suppression in the formation of low angle grain boundaries (sub-boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO2. For 27-μm-thick Si films, areas exceeding 1×1 mm2 have been recrystallized on SiO2 which are completely free of grain boundaries and sub-boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO2 interfaces.

UR - https://www.scopus.com/pages/publications/36749109112

UR - https://www.scopus.com/pages/publications/36749109112#tab=citedBy

U2 - 10.1063/1.94231

DO - 10.1063/1.94231

M3 - Article

AN - SCOPUS:36749109112

SN - 0003-6951

VL - 43

SP - 1048

EP - 1050

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO₂ layers

Abstract

All Science Journal Classification (ASJC) codes

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