Abstract
We observe a marked suppression in the formation of low angle grain boundaries (sub-boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO2. For 27-μm-thick Si films, areas exceeding 1×1 mm2 have been recrystallized on SiO2 which are completely free of grain boundaries and sub-boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO2 interfaces.
Original language | English (US) |
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Pages (from-to) | 1048-1050 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 43 |
Issue number | 11 |
DOIs | |
State | Published - 1983 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)