Abstract
The time evolution of optical recombination in the two-dimensional electron gas in GaAs/(Ga,Al)As heterostructures shows an anomalous increase at the Landau-level filling factor =1. Here we find that the radiative recombination rate is slowed by an order of magnitude and is commensurate with the quantum Hall effect. The inhibited electron-hole recombination is caused by localization and changes in the screening response of the electron gas, which leads to reduced electron-hole overlap and broadening of the density of states. These mechanisms are also manifest in a large increase in hole relaxation time at =1.
Original language | English (US) |
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Pages (from-to) | 6957-6960 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 45 |
Issue number | 12 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics