Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee

Research output: Contribution to journalArticle

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Abstract

In this work, we demonstrate that the incorporation of carbon in the base of a npn Si/SiGe/Si heterojunction bipolar transistor dramatically reduces the outdiffusion of boron from the base under postgrowth implantation and annealing procedures. Without the addition of C, these processes would lead to transistors with vastly degraded transistor characteristics. This reduction in B diffusion, when compared to devices without C, has been observed by both secondary ion mass spectroscopy and improved electrical characteristics.

Original languageEnglish (US)
Pages (from-to)3125-3127
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
DOIs
StatePublished - Jun 9 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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