Abstract
In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.
Original language | English (US) |
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Pages (from-to) | 297-302 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 469 |
DOIs | |
State | Published - 1997 |
Event | Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 1 1997 → Apr 4 1997 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering