Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation

L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Original languageEnglish (US)
Pages (from-to)297-302
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 1 1997Apr 4 1997

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation'. Together they form a unique fingerprint.

Cite this