Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation

L. D. Lanzerotti; J. C. Sturm; E. Stach; R. Hull; T. Buyuklimanli; C. Magee

doi:10.1557/proc-469-297

Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation

L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si_0.8Ge_0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Original language	English (US)
Pages (from-to)	297-302
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	469
DOIs	https://doi.org/10.1557/proc-469-297
State	Published - Jan 1 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 1 1997 → Apr 4 1997

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation",

abstract = "In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.",

author = "Lanzerotti, {L. D.} and Sturm, {J. C.} and E. Stach and R. Hull and T. Buyuklimanli and C. Magee",

year = "1997",

month = jan,

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doi = "10.1557/proc-469-297",

language = "English (US)",

volume = "469",

pages = "297--302",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 01-04-1997 Through 04-04-1997",

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TY - JOUR

T1 - Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation

AU - Lanzerotti, L. D.

AU - Sturm, J. C.

AU - Stach, E.

AU - Hull, R.

AU - Buyuklimanli, T.

AU - Magee, C.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

AB - In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

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U2 - 10.1557/proc-469-297

DO - 10.1557/proc-469-297

M3 - Conference article

AN - SCOPUS:0031357513

SN - 0272-9172

VL - 469

SP - 297

EP - 302

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 1 April 1997 through 4 April 1997

ER -

Suppression of boron transient enhanced diffusion in SiGe HBTs by carbon incorporation

Abstract

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