Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers

E. J. Stewart, M. S. Carroll, James C. Sturm

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1-x-yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1-xGex gate layers. Boron accumulates in the poly Si1-x-yGexCy layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si1-x-yGexCy appears to be electrically active, providing similar device performance compared to the poly Si or poly Si1-x-yGex gated devices.

Original languageEnglish (US)
Pages (from-to)574-576
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number12
DOIs
StatePublished - Dec 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Annealing
  • Boron
  • Charge carrier mobility
  • MOSFETs
  • Silicon alloys
  • Stability

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