Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers

E. J. Stewart; M. S. Carroll; James C. Sturm

doi:10.1109/55.974581

Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si_1-x-yGe_xC_y gate layers

E. J. Stewart, M. S. Carroll, James C. Sturm

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si_1-x-yGe_xC_y gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si_1-xGe_x gate layers. Boron accumulates in the poly Si_1-x-yGe_xC_y layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si_1-x-yGe_xC_y appears to be electrically active, providing similar device performance compared to the poly Si or poly Si_1-x-yGe_x gated devices.

Original language	English (US)
Pages (from-to)	574-576
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	12
DOIs	https://doi.org/10.1109/55.974581
State	Published - Dec 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Annealing
Boron
Charge carrier mobility
MOSFETs
Silicon alloys
Stability

Access to Document

10.1109/55.974581

Cite this

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title = "Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers",

abstract = "Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1-x-yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1-xGex gate layers. Boron accumulates in the poly Si1-x-yGexCy layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si1-x-yGexCy appears to be electrically active, providing similar device performance compared to the poly Si or poly Si1-x-yGex gated devices.",

keywords = "Annealing, Boron, Charge carrier mobility, MOSFETs, Silicon alloys, Stability",

author = "Stewart, {E. J.} and Carroll, {M. S.} and Sturm, {James C.}",

note = "Funding Information: Manuscript received July 30, 2001; revised August 28, 2001. This work was supported by DARPA/ONR Grants N660001-97-8904 and ARO DAA655-98-1-0270. The review of this letter was arranged by Editor C.-P. Chang. The authors are with the Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA (e-mail: [email protected]). Publisher Item Identifier S 0741-3106(01)10770-6.",

year = "2001",

month = dec,

doi = "10.1109/55.974581",

language = "English (US)",

volume = "22",

pages = "574--576",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

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AU - Stewart, E. J.

AU - Carroll, M. S.

AU - Sturm, James C.

N1 - Funding Information: Manuscript received July 30, 2001; revised August 28, 2001. This work was supported by DARPA/ONR Grants N660001-97-8904 and ARO DAA655-98-1-0270. The review of this letter was arranged by Editor C.-P. Chang. The authors are with the Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA (e-mail: [email protected]). Publisher Item Identifier S 0741-3106(01)10770-6.

PY - 2001/12

Y1 - 2001/12

N2 - Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1-x-yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1-xGex gate layers. Boron accumulates in the poly Si1-x-yGexCy layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si1-x-yGexCy appears to be electrically active, providing similar device performance compared to the poly Si or poly Si1-x-yGex gated devices.

AB - Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1-x-yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1-xGex gate layers. Boron accumulates in the poly Si1-x-yGexCy layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si1-x-yGexCy appears to be electrically active, providing similar device performance compared to the poly Si or poly Si1-x-yGex gated devices.

KW - Annealing

KW - Boron

KW - Charge carrier mobility

KW - MOSFETs

KW - Silicon alloys

KW - Stability

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