Polycrystalline Si1-x-yGexCy was used to study the effect on boron penetration across gate oxide in a metal-oxide-semiconductor structure. Although boron readily diffused through the Si1-x-yGexCy and accumulated in it, boron penetration through the underlying gate oxide is reduced compared to that in capacitors with gates of purely polycrystalline silicon. The results suggest that carbon reduces the chemical potential of boron.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 26 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)