Suppression of boron penetration by polycrystalline Si1-x-yGexCy in metal-oxide-semiconductor structures

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Polycrystalline Si1-x-yGexCy was used to study the effect on boron penetration across gate oxide in a metal-oxide-semiconductor structure. Although boron readily diffused through the Si1-x-yGexCy and accumulated in it, boron penetration through the underlying gate oxide is reduced compared to that in capacitors with gates of purely polycrystalline silicon. The results suggest that carbon reduces the chemical potential of boron.

Original languageEnglish (US)
Pages (from-to)2501-2503
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - Apr 26 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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