Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation

L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee

Research output: Contribution to journalConference article

63 Scopus citations

Abstract

A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base caused by thermal annealing or transient enhanced diffusion. In this paper we investigate the effects of C incorporation in the base on boron diffusion caused by thermal annealing and As emitter implantation. The higher Early voltages of the C transistors compared with that of the no-C transistors indicates that C incorporation in the base dramatically reduces the diffusion of B under postgrowth implantation and annealing procedures.

Original languageEnglish (US)
Pages (from-to)249-252
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 8 1996Dec 11 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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