Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation

L. D. Lanzerotti; J. C. Sturm; E. Stach; R. Hull; T. Buyuklimanli; C. Magee

doi:10.1109/IEDM.1996.553577

Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation

L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, C. Magee

Research output: Contribution to journal › Conference article › peer-review

68 Scopus citations

Abstract

A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base caused by thermal annealing or transient enhanced diffusion. In this paper we investigate the effects of C incorporation in the base on boron diffusion caused by thermal annealing and As emitter implantation. The higher Early voltages of the C transistors compared with that of the no-C transistors indicates that C incorporation in the base dramatically reduces the diffusion of B under postgrowth implantation and annealing procedures.

Original language	English (US)
Pages (from-to)	249-252
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1996.553577
State	Published - 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 8 1996 → Dec 11 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1996.553577

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title = "Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation",

abstract = "A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base caused by thermal annealing or transient enhanced diffusion. In this paper we investigate the effects of C incorporation in the base on boron diffusion caused by thermal annealing and As emitter implantation. The higher Early voltages of the C transistors compared with that of the no-C transistors indicates that C incorporation in the base dramatically reduces the diffusion of B under postgrowth implantation and annealing procedures.",

author = "Lanzerotti, {L. D.} and Sturm, {J. C.} and E. Stach and R. Hull and T. Buyuklimanli and C. Magee",

note = "Publisher Copyright: {\textcopyright} 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

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AU - Lanzerotti, L. D.

AU - Sturm, J. C.

AU - Stach, E.

AU - Hull, R.

AU - Buyuklimanli, T.

AU - Magee, C.

PY - 1996

Y1 - 1996

N2 - A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base caused by thermal annealing or transient enhanced diffusion. In this paper we investigate the effects of C incorporation in the base on boron diffusion caused by thermal annealing and As emitter implantation. The higher Early voltages of the C transistors compared with that of the no-C transistors indicates that C incorporation in the base dramatically reduces the diffusion of B under postgrowth implantation and annealing procedures.

AB - A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base caused by thermal annealing or transient enhanced diffusion. In this paper we investigate the effects of C incorporation in the base on boron diffusion caused by thermal annealing and As emitter implantation. The higher Early voltages of the C transistors compared with that of the no-C transistors indicates that C incorporation in the base dramatically reduces the diffusion of B under postgrowth implantation and annealing procedures.

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DO - 10.1109/IEDM.1996.553577

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SP - 249

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JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation

Abstract

All Science Journal Classification (ASJC) codes

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