Abstract
A quantum cascade (QC) laser employing chirped superlattices and operating at λ to approximately 17 μm, which represents the first demonstration of a semiconductor injection laser based on intra-band transitions at wavelengths beyond the atmosphere windows, is fabricated. A schematic band diagram of the structure, grown by MBE in InGaAs/InAlAs material system lattice matched to InP substrate, is presented.
Original language | English (US) |
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Pages | 2-3 |
Number of pages | 2 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: May 23 1999 → May 28 1999 |
Other
Other | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
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City | Baltimore, MD, USA |
Period | 5/23/99 → 5/28/99 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy