Summary Abstract: GaAs(110)-Al Interfaces Formed at Low Temperature

C. R. Bonapace; K. Li; Antoine Kahn

doi:10.1116/1.572446

Summary Abstract: GaAs(110)-Al Interfaces Formed at Low Temperature

C. R. Bonapace, K. Li, Antoine Kahn

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	566-567
Number of pages	2
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	2
Issue number	2
DOIs	https://doi.org/10.1116/1.572446
State	Published - Apr 1984

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.572446

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title = "Summary Abstract: GaAs(110)-Al Interfaces Formed at Low Temperature",

author = "Bonapace, {C. R.} and K. Li and Antoine Kahn",

year = "1984",

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language = "English (US)",

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journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

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number = "2",

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T1 - Summary Abstract

T2 - GaAs(110)-Al Interfaces Formed at Low Temperature

AU - Bonapace, C. R.

AU - Li, K.

AU - Kahn, Antoine

PY - 1984/4

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SN - 0734-2101

VL - 2

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Summary Abstract: GaAs(110)-Al Interfaces Formed at Low Temperature

All Science Journal Classification (ASJC) codes

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