SUBSURFACE ATOMIC DISPLACEMENTS AT THE GaAs(110) SURFACE.

Antoine Kahn; E. So; P. Mark; C. B. Duke

doi:10.1116/1.569630

SUBSURFACE ATOMIC DISPLACEMENTS AT THE GaAs(110) SURFACE.

Antoine Kahn, E. So, P. Mark, C. B. Duke

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Abstract

LEED IS (intensity-momentum transfer) data has been used to verify atomic displacements in the first subsurface layer of GaAs(110). IS profiles averaged over a range of incidence ( theta ) and azimuthal ( phi ) angles, subject to constant S, data for selected values of theta and phi , and similar IS profiles computed from kinematical calculations are intercompared to assess the relative importance of inadequate data averaging and variations of geometric parameters. Preferred atomic position parameters in the terminating region of the lattice are given.

Original language	English (US)
Pages (from-to)	580-584
Number of pages	5
Journal	J VAC SCI TECHNOL
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.569630
State	Published - 1978

All Science Journal Classification (ASJC) codes

General Engineering

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title = "SUBSURFACE ATOMIC DISPLACEMENTS AT THE GaAs(110) SURFACE.",

abstract = "LEED IS (intensity-momentum transfer) data has been used to verify atomic displacements in the first subsurface layer of GaAs(110). IS profiles averaged over a range of incidence ( theta ) and azimuthal ( phi ) angles, subject to constant S, data for selected values of theta and phi , and similar IS profiles computed from kinematical calculations are intercompared to assess the relative importance of inadequate data averaging and variations of geometric parameters. Preferred atomic position parameters in the terminating region of the lattice are given.",

author = "Antoine Kahn and E. So and P. Mark and Duke, {C. B.}",

year = "1978",

doi = "10.1116/1.569630",

language = "English (US)",

volume = "15",

pages = "580--584",

journal = "J VAC SCI TECHNOL",

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publisher = "American Institute of Physics",

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AU - Kahn, Antoine

AU - So, E.

AU - Mark, P.

AU - Duke, C. B.

PY - 1978

Y1 - 1978

N2 - LEED IS (intensity-momentum transfer) data has been used to verify atomic displacements in the first subsurface layer of GaAs(110). IS profiles averaged over a range of incidence ( theta ) and azimuthal ( phi ) angles, subject to constant S, data for selected values of theta and phi , and similar IS profiles computed from kinematical calculations are intercompared to assess the relative importance of inadequate data averaging and variations of geometric parameters. Preferred atomic position parameters in the terminating region of the lattice are given.

AB - LEED IS (intensity-momentum transfer) data has been used to verify atomic displacements in the first subsurface layer of GaAs(110). IS profiles averaged over a range of incidence ( theta ) and azimuthal ( phi ) angles, subject to constant S, data for selected values of theta and phi , and similar IS profiles computed from kinematical calculations are intercompared to assess the relative importance of inadequate data averaging and variations of geometric parameters. Preferred atomic position parameters in the terminating region of the lattice are given.

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JO - J VAC SCI TECHNOL

JF - J VAC SCI TECHNOL

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SUBSURFACE ATOMIC DISPLACEMENTS AT THE GaAs(110) SURFACE.

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