SUBSURFACE ATOMIC DISPLACEMENTS AT THE GaAs(110) SURFACE.

Antoine Kahn, E. So, P. Mark, C. B. Duke

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

LEED IS (intensity-momentum transfer) data has been used to verify atomic displacements in the first subsurface layer of GaAs(110). IS profiles averaged over a range of incidence ( theta ) and azimuthal ( phi ) angles, subject to constant S, data for selected values of theta and phi , and similar IS profiles computed from kinematical calculations are intercompared to assess the relative importance of inadequate data averaging and variations of geometric parameters. Preferred atomic position parameters in the terminating region of the lattice are given.

Original languageEnglish (US)
Pages (from-to)580-584
Number of pages5
JournalJ Vac Sci Technol
Volume15
Issue number2
DOIs
StatePublished - Jan 1 1978

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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