Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's

K. Tokunaga; J. C. Sturm; J. P. Colinge

Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's

K. Tokunaga, J. C. Sturm, J. P. Colinge

Research output: Contribution to conference › Paper › peer-review

Abstract

Summary form only given. Anomalously sharp subthreshold slopes in fully depleted ultrathin SOI MOSFETs are discussed. The effect can be eliminated by control of the lower SOI interface charge condition. The temperature dependence of this effect is also discussed.

Original language	English (US)
Pages	15-16
Number of pages	2
State	Published - 1989
Event	IEEE SOS/SOI Technology Conference 1989 - Stateline, NV, USA Duration: Oct 3 1989 → Oct 5 1989

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Other	IEEE SOS/SOI Technology Conference 1989
City	Stateline, NV, USA
Period	10/3/89 → 10/5/89

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{8877b8b663b04b60aeef81b544af9988,

title = "Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's",

abstract = "Summary form only given. Anomalously sharp subthreshold slopes in fully depleted ultrathin SOI MOSFETs are discussed. The effect can be eliminated by control of the lower SOI interface charge condition. The temperature dependence of this effect is also discussed.",

author = "K. Tokunaga and Sturm, {J. C.} and Colinge, {J. P.}",

year = "1989",

language = "English (US)",

pages = "15--16",

note = "IEEE SOS/SOI Technology Conference 1989 ; Conference date: 03-10-1989 Through 05-10-1989",

}

TY - CONF

T1 - Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's

AU - Tokunaga, K.

AU - Sturm, J. C.

AU - Colinge, J. P.

PY - 1989

Y1 - 1989

N2 - Summary form only given. Anomalously sharp subthreshold slopes in fully depleted ultrathin SOI MOSFETs are discussed. The effect can be eliminated by control of the lower SOI interface charge condition. The temperature dependence of this effect is also discussed.

AB - Summary form only given. Anomalously sharp subthreshold slopes in fully depleted ultrathin SOI MOSFETs are discussed. The effect can be eliminated by control of the lower SOI interface charge condition. The temperature dependence of this effect is also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0024881888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024881888&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0024881888

SP - 15

EP - 16

T2 - IEEE SOS/SOI Technology Conference 1989

Y2 - 3 October 1989 through 5 October 1989

ER -

Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's

Abstract

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All Science Journal Classification (ASJC) codes

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