Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

H. M. Ng; Claire F. Gmachl; S. V. Frolov; S. N.G. Chu; A. Y. Cho

doi:10.1049/ip-opt:20010752

Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

H. M. Ng
, Claire F. Gmachl
, S. V. Frolov
, S. N.G. Chu
, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ∼740 meV (λ = 1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured.

Original language	English (US)
Pages (from-to)	215-218
Number of pages	4
Journal	IEE Proceedings: Optoelectronics
Volume	148
Issue number	5-6
DOIs	https://doi.org/10.1049/ip-opt:20010752
State	Published - Oct 2001

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:20010752

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title = "Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy",

abstract = "GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ∼740 meV (λ = 1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured.",

author = "Ng, \{H. M.\} and Gmachl, \{Claire F.\} and Frolov, \{S. V.\} and Chu, \{S. N.G.\} and Cho, \{A. Y.\}",

year = "2001",

month = oct,

doi = "10.1049/ip-opt:20010752",

language = "English (US)",

volume = "148",

pages = "215--218",

journal = "IEE Proceedings: Optoelectronics",

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publisher = "Institution of Engineering and Technology",

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T1 - Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

AU - Ng, H. M.

AU - Gmachl, Claire F.

AU - Frolov, S. V.

AU - Chu, S. N.G.

AU - Cho, A. Y.

PY - 2001/10

Y1 - 2001/10

N2 - GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ∼740 meV (λ = 1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured.

AB - GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ∼740 meV (λ = 1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured.

UR - https://www.scopus.com/pages/publications/0035481404

UR - https://www.scopus.com/pages/publications/0035481404#tab=citedBy

U2 - 10.1049/ip-opt:20010752

DO - 10.1049/ip-opt:20010752

M3 - Article

AN - SCOPUS:0035481404

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JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 5-6

ER -

Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

Abstract

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