GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ∼740 meV (λ = 1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications
- Electrical and Electronic Engineering