Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy

H. M. Ng, Claire F. Gmachl, S. V. Frolov, S. N.G. Chu, A. Y. Cho

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ∼740 meV (λ = 1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured.

Original languageEnglish (US)
Pages (from-to)215-218
Number of pages4
JournalIEE Proceedings: Optoelectronics
Volume148
Issue number5-6
DOIs
StatePublished - Oct 1 2001

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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