Abstract
We characterize a strongly anisotropic waveguide consisting of alternating 80 nm layers of n+-InGaAs and i-AlInAs on InP substrate. A strong increase in the transverse magnetic (TM) reflection at λ = 8.4 μm corresponds to a characteristic low-order mode cutoff for the left-handed waveguide. The subsequent decrease of TM reflection at λ= 11.5 μm represents the onset of right-handed no-cutoff light guiding. Good qualitative agreement is found when the experimental results are compared to finite element and transfer-matrix frequency domain simulations.
Original language | English (US) |
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Pages (from-to) | 16404-16409 |
Number of pages | 6 |
Journal | Optics Express |
Volume | 16 |
Issue number | 21 |
DOIs | |
State | Published - Oct 13 2008 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics