Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE

Material Science

• Lithography 100%
• Nanocrystalline Material 33%
• Photoluminescence 33%
• Reactive Ion Etching 100%
• Silicon 100%
• Wet Etching 33%

Engineering

• Aspect Ratio 50%
• Electron Optical Lithography 100%
• Etching Process 50%
• High Aspect Ratio 100%
• High Resolution 50%

Keyphrases

• Two-step Etching 33%