Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching

P. B. Fischer, S. Y. Chou

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultrahigh resolution electron beam lithography and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using an additional HF wet etch. No photoluminescence was observed from arrays of 10 nm Si structures passivated with HF.

Original languageEnglish (US)
Pages (from-to)1414-1416
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number12
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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