Abstract
We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultrahigh resolution electron beam lithography and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using an additional HF wet etch. No photoluminescence was observed from arrays of 10 nm Si structures passivated with HF.
Original language | English (US) |
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Pages (from-to) | 1414-1416 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 12 |
DOIs | |
State | Published - 1993 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)