Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE

P. B. Fischer, S. Y. Chou

Research output: Contribution to conferencePaper

Abstract

We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultra-high resolution electron beam lithography and chlorine based reactive ion etching (RIE). A novel two step etching process involving RIE plus wet etching was developed to achieve 10 nm Si features. Furthermore, photoluminescence studies of these Si nanostructures are also presented.

Original languageEnglish (US)
Pages443-445
Number of pages3
DOIs
StatePublished - Jan 1 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE'. Together they form a unique fingerprint.

  • Cite this

    Fischer, P. B., & Chou, S. Y. (1992). Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE. 443-445. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pd3-8