Abstract
We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultra-high resolution electron beam lithography and chlorine based reactive ion etching (RIE). A novel two step etching process involving RIE plus wet etching was developed to achieve 10 nm Si features. Furthermore, photoluminescence studies of these Si nanostructures are also presented.
Original language | English (US) |
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Pages | 443-445 |
Number of pages | 3 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |
Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: Aug 26 1992 → Aug 28 1992 |
Other
Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
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City | Tsukuba, Jpn |
Period | 8/26/92 → 8/28/92 |
All Science Journal Classification (ASJC) codes
- General Engineering