Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE

P. B. Fischer; S. Y. Chou

doi:10.7567/ssdm.1992.pd3-8

Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE

P. B. Fischer, S. Y. Chou

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultra-high resolution electron beam lithography and chlorine based reactive ion etching (RIE). A novel two step etching process involving RIE plus wet etching was developed to achieve 10 nm Si features. Furthermore, photoluminescence studies of these Si nanostructures are also presented.

Original language	English (US)
Pages	443-445
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.pd3-8
State	Published - 1992
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: Aug 26 1992 → Aug 28 1992

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	8/26/92 → 8/28/92

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.7567/ssdm.1992.pd3-8

Cite this

@conference{48137ca496ae43cd9cfce2647be43810,

title = "Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE",

abstract = "We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultra-high resolution electron beam lithography and chlorine based reactive ion etching (RIE). A novel two step etching process involving RIE plus wet etching was developed to achieve 10 nm Si features. Furthermore, photoluminescence studies of these Si nanostructures are also presented.",

author = "Fischer, {P. B.} and Chou, {S. Y.}",

year = "1992",

doi = "10.7567/ssdm.1992.pd3-8",

language = "English (US)",

pages = "443--445",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE. / Fischer, P. B.; Chou, S. Y.
1992. 443-445 Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE

AU - Fischer, P. B.

AU - Chou, S. Y.

PY - 1992

Y1 - 1992

N2 - We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultra-high resolution electron beam lithography and chlorine based reactive ion etching (RIE). A novel two step etching process involving RIE plus wet etching was developed to achieve 10 nm Si features. Furthermore, photoluminescence studies of these Si nanostructures are also presented.

AB - We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultra-high resolution electron beam lithography and chlorine based reactive ion etching (RIE). A novel two step etching process involving RIE plus wet etching was developed to achieve 10 nm Si features. Furthermore, photoluminescence studies of these Si nanostructures are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0026963578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026963578&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1992.pd3-8

DO - 10.7567/ssdm.1992.pd3-8

M3 - Paper

AN - SCOPUS:0026963578

SP - 443

EP - 445

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Sub-50 nm high aspect-ratio silicon pillars, ridges and trenches fabricated using ultra-high E-beam lithography and RIE

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this