SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY LITHOGRAPHY.

S. Y. Chou; Henry I. Smith; D. A. Antoniadis

doi:10.1116/1.583451

SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY LITHOGRAPHY.

S. Y. Chou
, Henry I. Smith
, D. A. Antoniadis

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.

Original language	English (US)
Pages (from-to)	253-255
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	4
Issue number	1
DOIs	https://doi.org/10.1116/1.583451
State	Published - Jan 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.",

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Y1 - 1986/1

N2 - Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.

AB - Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.

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SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY LITHOGRAPHY.

Abstract

All Science Journal Classification (ASJC) codes

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