Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 1986|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering