Abstract
Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.
Original language | English (US) |
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Pages (from-to) | 253-255 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 4 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1986 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering