SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY LITHOGRAPHY.

S. Y. Chou, Henry I. Smith, D. A. Antoniadis

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Enhancement-mode n-channel Si field-effect transistors with channel lengths ranging from 60 nm to 5 mu m have been fabricated using combined optical and x-ray lithographies, and were characterized from room temperature to 4. 2 K. At room temperature, the 80 nm channel-length device showed quasi-long-channel behavior with high transconductance. At 4. 2 K, a significant increase in transconductance was observed which may indicate velocity overshoot.

Original languageEnglish (US)
Pages (from-to)253-255
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume4
Issue number1
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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