Sub-10 nm imprint lithography and applications

Peter R. Krauss, Stephen Y. Chou

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

New developments in achieving the holes and dots with 6 nm feature size, 40 nm period on silicon, and 10 nm feature size, 40 nm period on a Au substrate, and an application of nanoimprint lithography (NIL) to the nanoscale compact disk (CD) fabrication, are presented. SiO2 molds were fabricated using high-resolution electron beam lithography and reactive ion etching with minimum lateral feature size of 10 nm to explore the ultimate minimum feature size of NIL. However, isotropic etching was used to further reduce the minimum lateral feature size of the mold to 6 nm. This indicates that the NIL minimum feature size is limited by the minimum mold feature size which can be fabricated rather than the NIL process.

Original languageEnglish (US)
Pages90-91
Number of pages2
StatePublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: Jun 23 1997Jun 25 1997

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period6/23/976/25/97

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Krauss, P. R., & Chou, S. Y. (1997). Sub-10 nm imprint lithography and applications. 90-91. Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA, .