Study of PPC in AlGaAs/GaAs heterostructures. Discovery of an excited state of the DX center at 0.65 eV

M. Spector; L. N. Pfeiffer; J. C. Licini; K. W. West; G. A. Baraff

Study of PPC in AlGaAs/GaAs heterostructures. Discovery of an excited state of the DX center at 0.65 eV

M. Spector, L. N. Pfeiffer, J. C. Licini, K. W. West, G. A. Baraff

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photopath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.

Original language	English (US)
Pages (from-to)	1141-1148
Number of pages	8
Journal	Materials Science Forum
Volume	143-4
Issue number	pt 2
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{7992c8db72444fe9b510493a2744be7f,

title = "Study of PPC in AlGaAs/GaAs heterostructures. Discovery of an excited state of the DX center at 0.65 eV",

abstract = "We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photopath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.",

author = "M. Spector and Pfeiffer, {L. N.} and Licini, {J. C.} and West, {K. W.} and Baraff, {G. A.}",

year = "1994",

language = "English (US)",

volume = "143-4",

pages = "1141--1148",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "pt 2",

note = "Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) ; Conference date: 18-07-1993 Through 23-07-1993",

}

TY - JOUR

T1 - Study of PPC in AlGaAs/GaAs heterostructures. Discovery of an excited state of the DX center at 0.65 eV

AU - Spector, M.

AU - Pfeiffer, L. N.

AU - Licini, J. C.

AU - West, K. W.

AU - Baraff, G. A.

PY - 1994

Y1 - 1994

N2 - We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photopath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.

AB - We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photopath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.

UR - http://www.scopus.com/inward/record.url?scp=0028571265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028571265&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028571265

SN - 0255-5476

VL - 143-4

SP - 1141

EP - 1148

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 2

T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Study of PPC in AlGaAs/GaAs heterostructures. Discovery of an excited state of the DX center at 0.65 eV

Abstract

All Science Journal Classification (ASJC) codes

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