Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

H. Lu; A. Shen; M. C. Tamargo; W. Charles; I. Yokomizo; M. Mũoz; Y. Gong; G. F. Neumark; K. J. Franz; Claire F. Gmachl; C. Y. Song; H. C. Liu

doi:10.1116/1.2723761

Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Mũoz, Y. Gong, G. F. Neumark, K. J. Franz, Claire F. Gmachl, C. Y. Song, H. C. Liu

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6 Scopus citations

Abstract

Two Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - y′ Se multiple quantum well structures were grown by molecular beam epitaxy. The quantum well layer thickness of the multiple quantum well region was varied in order to tune the intersubband transition energy. The high crystalline quality of the material was demonstrated by high resolution x-ray diffraction. Contactless electroreflectance (CER) spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to characterize the intersubband transitions. Excellent agreement between the estimated value obtained by CER and the value measured by FTIR was achieved. Intersubband absorption at 6.89 and 5.37 μm was observed demonstrating the ability to tune the properties of these wide band gap II-VI materials for mid-IR intersubband device applications.

Original language	English (US)
Pages (from-to)	1103-1107
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	3
DOIs	https://doi.org/10.1116/1.2723761
State	Published - 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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Lu, H., Shen, A., Tamargo, M. C., Charles, W., Yokomizo, I., Mũoz, M., Gong, Y., Neumark, G. F., Franz, K. J., Gmachl, C. F., Song, C. Y., & Liu, H. C. (2007). Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), 1103-1107. https://doi.org/10.1116/1.2723761

@article{c73884ee1e2e4c7190a23f67ee94c9f9,

title = "Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications",

abstract = "Two Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - y′ Se multiple quantum well structures were grown by molecular beam epitaxy. The quantum well layer thickness of the multiple quantum well region was varied in order to tune the intersubband transition energy. The high crystalline quality of the material was demonstrated by high resolution x-ray diffraction. Contactless electroreflectance (CER) spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to characterize the intersubband transitions. Excellent agreement between the estimated value obtained by CER and the value measured by FTIR was achieved. Intersubband absorption at 6.89 and 5.37 μm was observed demonstrating the ability to tune the properties of these wide band gap II-VI materials for mid-IR intersubband device applications.",

author = "H. Lu and A. Shen and Tamargo, {M. C.} and W. Charles and I. Yokomizo and M. Mũoz and Y. Gong and Neumark, {G. F.} and Franz, {K. J.} and Gmachl, {Claire F.} and Song, {C. Y.} and Liu, {H. C.}",

note = "Funding Information: This work was supported by NASA Grant No. NCC-1-03009, NSF Grant No. EEC-0540832 through MIRTHE-ERC, and the Center for Analysis of Structures and Interfaces (CASI). Special thanks to Dr. S. K. Zhang and Dr. R. R. Alfano, and Dr. D. Crouse for helpful discussions and support. One of the authors (K.J.F.) acknowledges the support of the NSF Graduate Research Fellowship Program.",

year = "2007",

doi = "10.1116/1.2723761",

language = "English (US)",

volume = "25",

pages = "1103--1107",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "3",

}

Lu, H, Shen, A, Tamargo, MC, Charles, W, Yokomizo, I, Mũoz, M, Gong, Y, Neumark, GF, Franz, KJ, Gmachl, CF, Song, CY & Liu, HC 2007, 'Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 3, pp. 1103-1107. https://doi.org/10.1116/1.2723761

Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications. / Lu, H.; Shen, A.; Tamargo, M. C. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3, 2007, p. 1103-1107.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

AU - Lu, H.

AU - Shen, A.

AU - Tamargo, M. C.

AU - Charles, W.

AU - Yokomizo, I.

AU - Mũoz, M.

AU - Gong, Y.

AU - Neumark, G. F.

AU - Franz, K. J.

AU - Gmachl, Claire F.

AU - Song, C. Y.

AU - Liu, H. C.

N1 - Funding Information: This work was supported by NASA Grant No. NCC-1-03009, NSF Grant No. EEC-0540832 through MIRTHE-ERC, and the Center for Analysis of Structures and Interfaces (CASI). Special thanks to Dr. S. K. Zhang and Dr. R. R. Alfano, and Dr. D. Crouse for helpful discussions and support. One of the authors (K.J.F.) acknowledges the support of the NSF Graduate Research Fellowship Program.

PY - 2007

Y1 - 2007

N2 - Two Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - y′ Se multiple quantum well structures were grown by molecular beam epitaxy. The quantum well layer thickness of the multiple quantum well region was varied in order to tune the intersubband transition energy. The high crystalline quality of the material was demonstrated by high resolution x-ray diffraction. Contactless electroreflectance (CER) spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to characterize the intersubband transitions. Excellent agreement between the estimated value obtained by CER and the value measured by FTIR was achieved. Intersubband absorption at 6.89 and 5.37 μm was observed demonstrating the ability to tune the properties of these wide band gap II-VI materials for mid-IR intersubband device applications.

AB - Two Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - y′ Se multiple quantum well structures were grown by molecular beam epitaxy. The quantum well layer thickness of the multiple quantum well region was varied in order to tune the intersubband transition energy. The high crystalline quality of the material was demonstrated by high resolution x-ray diffraction. Contactless electroreflectance (CER) spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to characterize the intersubband transitions. Excellent agreement between the estimated value obtained by CER and the value measured by FTIR was achieved. Intersubband absorption at 6.89 and 5.37 μm was observed demonstrating the ability to tune the properties of these wide band gap II-VI materials for mid-IR intersubband device applications.

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DO - 10.1116/1.2723761

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SN - 1071-1023

VL - 25

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EP - 1107

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Lu H, Shen A, Tamargo MC, Charles W, Yokomizo I, Mũoz M et al. Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007;25(3):1103-1107. doi: 10.1116/1.2723761

Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

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