Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Mũoz, Y. Gong, G. F. Neumark, K. J. Franz, Claire F. Gmachl, C. Y. Song, H. C. Liu

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Two Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - y′ Se multiple quantum well structures were grown by molecular beam epitaxy. The quantum well layer thickness of the multiple quantum well region was varied in order to tune the intersubband transition energy. The high crystalline quality of the material was demonstrated by high resolution x-ray diffraction. Contactless electroreflectance (CER) spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to characterize the intersubband transitions. Excellent agreement between the estimated value obtained by CER and the value measured by FTIR was achieved. Intersubband absorption at 6.89 and 5.37 μm was observed demonstrating the ability to tune the properties of these wide band gap II-VI materials for mid-IR intersubband device applications.

Original languageEnglish (US)
Pages (from-to)1103-1107
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
StatePublished - Jun 11 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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