Abstract
The preparation and physical characterization of non-stoichiometric Ru2Ge3+x (0 ≤ x ≤ 1) are reported for the first time. The defect TiSi2-type chimney-ladder structure is maintained for the full stoichiometry range. The resistivity of Ru2Ge3+x increases systematically with x from 300 m Ω cm, x = 0-3 Ω cm, x = 1 at 300 K. The temperature dependence is consistent with a variable range-hopping mechanism for x ≥ 0.6. The Seebeck coefficients of samples do not evolve simply with x. A low thermal conductivity (κ300 K = 0.03 W/K cm) suggests that Ru2Ge3 has some of the properties of a phonon-glass-electron-crystal. The low value of the thermoelectric figure of merit ZT = 3.2 × 10-3 (T = 300 K) calculated for Ru2Ge3 is due primarily to a low conductivity.
Original language | English (US) |
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Pages (from-to) | 389-394 |
Number of pages | 6 |
Journal | Journal of Solid State Chemistry |
Volume | 166 |
Issue number | 2 |
DOIs | |
State | Published - 2002 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry
- Materials Chemistry
Keywords
- Electronic properties
- Incommensurate structure
- RuGe