Abstract
The Al-GaP(110) and Al-InP(110) interfaces are characterized with low energy electron diffraction and Auger electron spectroscopy. Both interfaces are reactive, i. e. , the replacement of the cation by Al is thermodynamically favorable. However, Al evaporated on the room temperature substrates has a high surface mobility and forms metallic islands which leave the atomic structure of the uncovered semiconductor areas unperturbed. Limited Al-substrate reaction can be detected at room temperature. Moderate annealing triggers a large scale Al-cation replacement reaction and leads to the formation of AlP layers. The crystalline quality of the AlP layers is good for Al on GaP (0. 01% lattice mismatch between AlP and InP) and poor for Al on InP (7% lattice mismatch between AlP and InP). The atomic geometry of AlP(110) is analyzed with multiple scattering LEED computation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 613-617 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1983 |
| Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering