STRUCTURE OF THE Al-GaP(110) AND Al-InP(110) INTERFACES.

Antoine Kahn, C. R. Bonapace, C. B. Duke, A. Paton

Research output: Contribution to journalConference articlepeer-review

31 Scopus citations

Abstract

The Al-GaP(110) and Al-InP(110) interfaces are characterized with low energy electron diffraction and Auger electron spectroscopy. Both interfaces are reactive, i. e. , the replacement of the cation by Al is thermodynamically favorable. However, Al evaporated on the room temperature substrates has a high surface mobility and forms metallic islands which leave the atomic structure of the uncovered semiconductor areas unperturbed. Limited Al-substrate reaction can be detected at room temperature. Moderate annealing triggers a large scale Al-cation replacement reaction and leads to the formation of AlP layers. The crystalline quality of the AlP layers is good for Al on GaP (0. 01% lattice mismatch between AlP and InP) and poor for Al on InP (7% lattice mismatch between AlP and InP). The atomic geometry of AlP(110) is analyzed with multiple scattering LEED computation.

Original languageEnglish (US)
Pages (from-to)613-617
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number3
DOIs
StatePublished - Jan 1 1983
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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