Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

K. Hricovini; G. Le Lay; Antoine Kahn; A. Taleb-Ibrahimi; J. E. Bonnet; L. Lassabatère; M. Dumas

doi:10.1016/0039-6028(91)91027-U

Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

K. Hricovini, G. Le Lay, Antoine Kahn, A. Taleb-Ibrahimi, J. E. Bonnet, L. Lassabatère, M. Dumas

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hν = 108 eV), we recorded spectra in a surface-sensitive mode (hν = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.

Original language	English (US)
Pages (from-to)	424-427
Number of pages	4
Journal	Surface Science
Volume	251-252
Issue number	C
DOIs	https://doi.org/10.1016/0039-6028(91)91027-U
State	Published - Jul 1 1991

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces",

abstract = "We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hν = 108 eV), we recorded spectra in a surface-sensitive mode (hν = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.",

author = "K. Hricovini and {Le Lay}, G. and Antoine Kahn and A. Taleb-Ibrahimi and Bonnet, {J. E.} and L. Lassabat{\`e}re and M. Dumas",

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doi = "10.1016/0039-6028(91)91027-U",

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T1 - Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

AU - Hricovini, K.

AU - Le Lay, G.

AU - Kahn, Antoine

AU - Taleb-Ibrahimi, A.

AU - Bonnet, J. E.

AU - Lassabatère, L.

AU - Dumas, M.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hν = 108 eV), we recorded spectra in a surface-sensitive mode (hν = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.

AB - We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hν = 108 eV), we recorded spectra in a surface-sensitive mode (hν = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.

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VL - 251-252

SP - 424

EP - 427

JO - Surface Science

JF - Surface Science

IS - C

ER -

Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

Abstract

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