Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces

K. Hricovini, G. Le Lay, Antoine Kahn, A. Taleb-Ibrahimi, J. E. Bonnet, L. Lassabatère, M. Dumas

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Abstract

We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hν = 108 eV), we recorded spectra in a surface-sensitive mode (hν = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.

Original languageEnglish (US)
Pages (from-to)424-427
Number of pages4
JournalSurface Science
Volume251-252
Issue numberC
DOIs
StatePublished - Jul 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Hricovini, K., Le Lay, G., Kahn, A., Taleb-Ibrahimi, A., Bonnet, J. E., Lassabatère, L., & Dumas, M. (1991). Structure effects on Schottky barrier heights of Pb/Si and Bi/Si interfaces. Surface Science, 251-252(C), 424-427. https://doi.org/10.1016/0039-6028(91)91027-U