STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS.

C. B. Duke, R. J. Meyer, A. Paton, P. Mark, Antoine Kahn, E. So, J. L. Yeh

Research output: Contribution to journalConference article

36 Scopus citations

Abstract

A survey is presented of determinations of the atomic geometries of the (110) surfaces of zincblende-structure III-V and II-VI compounds via analyses of elastic low-energy electron diffraction intensities, of both integrated and angle-resolved ultraviolet photoemission spectra, and of electron paramagnetic resonance signals associated with adsorbed O//2** minus complexes. Comparison of the proposed model geometries for GaAs(110) shows that they are compatible both with each other to within the accuracy of the analytical methodologies and with energy-minimization calculated structures. Results for other materials are fragmentary, but indicate incompatibilities between spectroscopically-determined and energy-minimized structures for ZnTe(110) and InSb(110).

Original languageEnglish (US)
Pages (from-to)1252-1257
Number of pages6
JournalJournal of vacuum science & technology
Volume16
Issue number5
DOIs
StatePublished - Jan 1 1979
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA
Duration: Jan 30 1979Feb 1 1979

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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