A survey is presented of determinations of the atomic geometries of the (110) surfaces of zincblende-structure III-V and II-VI compounds via analyses of elastic low-energy electron diffraction intensities, of both integrated and angle-resolved ultraviolet photoemission spectra, and of electron paramagnetic resonance signals associated with adsorbed O//2** minus complexes. Comparison of the proposed model geometries for GaAs(110) shows that they are compatible both with each other to within the accuracy of the analytical methodologies and with energy-minimization calculated structures. Results for other materials are fragmentary, but indicate incompatibilities between spectroscopically-determined and energy-minimized structures for ZnTe(110) and InSb(110).
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1979|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA|
Duration: Jan 30 1979 → Feb 1 1979
All Science Journal Classification (ASJC) codes