STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS.

C. B. Duke; R. J. Meyer; A. Paton; P. Mark; Antoine Kahn; E. So; J. L. Yeh

doi:10.1116/1.570136

STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS.

C. B. Duke, R. J. Meyer, A. Paton, P. Mark, Antoine Kahn, E. So, J. L. Yeh

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

A survey is presented of determinations of the atomic geometries of the (110) surfaces of zincblende-structure III-V and II-VI compounds via analyses of elastic low-energy electron diffraction intensities, of both integrated and angle-resolved ultraviolet photoemission spectra, and of electron paramagnetic resonance signals associated with adsorbed O//2** minus complexes. Comparison of the proposed model geometries for GaAs(110) shows that they are compatible both with each other to within the accuracy of the analytical methodologies and with energy-minimization calculated structures. Results for other materials are fragmentary, but indicate incompatibilities between spectroscopically-determined and energy-minimized structures for ZnTe(110) and InSb(110).

Original language	English (US)
Pages (from-to)	1252-1257
Number of pages	6
Journal	Journal of vacuum science & technology
Volume	16
Issue number	5
DOIs	https://doi.org/10.1116/1.570136
State	Published - 1979
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA Duration: Jan 30 1979 → Feb 1 1979

All Science Journal Classification (ASJC) codes

General Engineering

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10.1116/1.570136

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title = "STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS.",

abstract = "A survey is presented of determinations of the atomic geometries of the (110) surfaces of zincblende-structure III-V and II-VI compounds via analyses of elastic low-energy electron diffraction intensities, of both integrated and angle-resolved ultraviolet photoemission spectra, and of electron paramagnetic resonance signals associated with adsorbed O//2** minus complexes. Comparison of the proposed model geometries for GaAs(110) shows that they are compatible both with each other to within the accuracy of the analytical methodologies and with energy-minimization calculated structures. Results for other materials are fragmentary, but indicate incompatibilities between spectroscopically-determined and energy-minimized structures for ZnTe(110) and InSb(110).",

author = "Duke, {C. B.} and Meyer, {R. J.} and A. Paton and P. Mark and Antoine Kahn and E. So and Yeh, {J. L.}",

year = "1979",

doi = "10.1116/1.570136",

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T1 - STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS.

AU - Duke, C. B.

AU - Meyer, R. J.

AU - Paton, A.

AU - Mark, P.

AU - Kahn, Antoine

AU - So, E.

AU - Yeh, J. L.

PY - 1979

Y1 - 1979

N2 - A survey is presented of determinations of the atomic geometries of the (110) surfaces of zincblende-structure III-V and II-VI compounds via analyses of elastic low-energy electron diffraction intensities, of both integrated and angle-resolved ultraviolet photoemission spectra, and of electron paramagnetic resonance signals associated with adsorbed O//2** minus complexes. Comparison of the proposed model geometries for GaAs(110) shows that they are compatible both with each other to within the accuracy of the analytical methodologies and with energy-minimization calculated structures. Results for other materials are fragmentary, but indicate incompatibilities between spectroscopically-determined and energy-minimized structures for ZnTe(110) and InSb(110).

AB - A survey is presented of determinations of the atomic geometries of the (110) surfaces of zincblende-structure III-V and II-VI compounds via analyses of elastic low-energy electron diffraction intensities, of both integrated and angle-resolved ultraviolet photoemission spectra, and of electron paramagnetic resonance signals associated with adsorbed O//2** minus complexes. Comparison of the proposed model geometries for GaAs(110) shows that they are compatible both with each other to within the accuracy of the analytical methodologies and with energy-minimization calculated structures. Results for other materials are fragmentary, but indicate incompatibilities between spectroscopically-determined and energy-minimized structures for ZnTe(110) and InSb(110).

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JF - Journal of vacuum science & technology

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T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th

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STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS.

Abstract

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