Structure and density of silicon carbide to 1.5 TPa and implications for extrasolar planets

D. Kim, R. F. Smith, I. K. Ocampo, F. Coppari, M. C. Marshall, M. K. Ginnane, J. K. Wicks, S. J. Tracy, M. Millot, A. Lazicki, J. R. Rygg, J. H. Eggert, T. S. Duffy

Research output: Contribution to journalArticlepeer-review

Abstract

There has been considerable recent interest in the high-pressure behavior of silicon carbide, a potential major constituent of carbon-rich exoplanets. In this work, the atomic-level structure of SiC was determined through in situ X-ray diffraction under laser-driven ramp compression up to 1.5 TPa; stresses more than seven times greater than previous static and shock data. Here we show that the B1-type structure persists over this stress range and we have constrained its equation of state (EOS). Using this data we have determined the first experimentally based mass-radius curves for a hypothetical pure SiC planet. Interior structure models are constructed for planets consisting of a SiC-rich mantle and iron-rich core. Carbide planets are found to be ~10% less dense than corresponding terrestrial planets.

Original languageEnglish (US)
Article number2260
JournalNature communications
Volume13
Issue number1
DOIs
StatePublished - Dec 2022

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • General
  • Physics and Astronomy(all)

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