5 Scopus citations

Abstract

The atomic structures of (331)-A and (331)-B GaAs surfaces, prepared by ion bombardment and annealing (IBA) or by molecular-beam epitaxy, are investigated with low-energy electron diffraction, electron energy-loss spectroscopy, and Auger electron spectroscopy. The IBA (331)-Asurface exhibits double-layer steps at rather low temperature, and develops large (110) and (111) facets after further annealing at ~420 °C; the (331)-B surface is flat up to annealing temperatures ~600 °C, and exhibits large {110} and (111) facets after further annealing. When prepared by molecular-beam epitaxy, the (331)-A surface exhibits double-layer steps after annealing up to ~550 °C, and develop (110) and (111) facets after further annealing; the (331)-B surface is flat up to annealing at 550 °C, and exhibits double-layer steps after further annealing at 600 °C; it then develops large {110} and (111) facets after further annealing.

Original languageEnglish (US)
Pages (from-to)2039-2043
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - May 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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