Abstract
Solution-processing of chalcogenide glass materials has many benefits for the fabrication of photonic devices. We report on the structural properties of Ge 23Sb 7S 70 glass during solution-processing. The molecular and micro-structure of the bulk glass and the n-propylamine solution, as well as the spin-coated thin films and post-irradiated films are analyzed by Raman spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. We find the vibrational spectral fingerprint of Ge 4S 10 4--units in the amine solutions as well as in the spin-coated films, indicating a similar molecular structure of solutions and solution-processed films, which differs from the bulk glass. Moreover, the spin-coated films exhibit nanopores, and change their composition during irradiation such that sulfur escapes from the film while oxygen gets absorbed.
Original language | English (US) |
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Pages (from-to) | 17848-17852 |
Number of pages | 5 |
Journal | Journal of Materials Chemistry |
Volume | 22 |
Issue number | 34 |
DOIs | |
State | Published - Sep 14 2012 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Materials Chemistry