We have studied structural and transport properties of epitaxial Nax Co O2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3 O4 film to Nax Co O2 with annealing in Na vapor. The films are c -axis oriented and in-plane aligned with [10 1- 0] Nax Co O2 rotated by 30° from [10 1- 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Oct 24 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)