Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan, Yong P. Chen

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance.

Original languageEnglish (US)
Pages (from-to)133-135
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number1-2
DOIs
StatePublished - Feb 1 2013

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • BiSe
  • Bulk quantum Hall effect
  • Topological insulators
  • Transport

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