Structural and electronic properties of composite B_xC_yN_z nanotubes and heterojunctions

The structure, stability and electronic properties of composite B_xC_yN_z nanotubes and related heterojunctions have been studied using both ab initio and semi-empirical approaches. Pure BN nanotubes present a very stable quasiparticle band gap around 5.5-6.0 eV independent of the tube radius and helicity. The bottom of the conduction bands is controlled by a nearly-free-electronn state localized inside the nanotube, suggesting interesting properties under doping. In the case of nanotubes with BC₂N stoichiometry, we show that in the thermodynamic limit the system is driven towards segregation of pure C and BN sections. This demixing significantly affects the electronic properties of such materials. The same process of segregation into BC₃ islands is evidenced in the case of B-doped carbon nanotubes. These spontaneous segregation processes lead to the formation of quantum dots or nanotube heterojunctions. In particular, C/BN superlattices or isolated junctions have been investigated as specific examples of the wide variety of electronic devices that can be realized using such nanotubes.