Structural and electrical characterization of Bi ₂Se ₃ nanostructures grown by metal-organic chemical vapor deposition

We characterize nanostructures of Bi ₂Se ₃ that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩcm. We observe weak antilocalization and extract a phase coherence length l _β = 178 nm and spin-orbit length l _so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.