Structural and electrical characterization of Bi 2Se 3 nanostructures grown by metal-organic chemical vapor deposition

L. D. Alegria, M. D. Schroer, A. Chatterjee, G. R. Poirier, M. Pretko, S. K. Patel, J. R. Petta

Research output: Contribution to journalArticle

54 Scopus citations

Abstract

We characterize nanostructures of Bi 2Se 3 that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩcm. We observe weak antilocalization and extract a phase coherence length l β = 178 nm and spin-orbit length l so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

Original languageEnglish (US)
Pages (from-to)4711-4714
Number of pages4
JournalNano Letters
Volume12
Issue number9
DOIs
StatePublished - Sep 12 2012

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Bi Se
  • MOCVD
  • VLS
  • nanoribbon
  • topological insulator

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