Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

B. Habib; E. Tutuc; M. Shayegan

doi:10.1063/1.2720711

Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

B. Habib, E. Tutuc, M. Shayegan

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20 Scopus citations

Abstract

The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possibleapplications to spintronics.

Original language	English (US)
Article number	152104
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2720711
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2720711

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title = "Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes",

abstract = "The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possibleapplications to spintronics.",

author = "B. Habib and E. Tutuc and M. Shayegan",

note = "Funding Information: The authors thank K. Ensslin, B. Grbic, and L. Rokhinson for helpful advice on the AFM LAO technique, and R. Winkler and S. Lyon for discussions. This work was supported by the DOE, NSF, and the von Humboldt Foundation.",

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doi = "10.1063/1.2720711",

language = "English (US)",

volume = "90",

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T1 - Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

AU - Habib, B.

AU - Tutuc, E.

AU - Shayegan, M.

N1 - Funding Information: The authors thank K. Ensslin, B. Grbic, and L. Rokhinson for helpful advice on the AFM LAO technique, and R. Winkler and S. Lyon for discussions. This work was supported by the DOE, NSF, and the von Humboldt Foundation.

PY - 2007

Y1 - 2007

N2 - The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possibleapplications to spintronics.

AB - The authors measured Aharonov-Bohm resistance oscillations [Phys. Rev. 115, 485 (1959)] in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition the authors observe resistance oscillations as a function of front gate bias at zero magnetic field. They authors discuss the results in light of spin interference in the ring and possibleapplications to spintronics.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152104

ER -

Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes

Abstract

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