Stress tuning of the metal-insulator transition at millikelvin temperatures

M. A. Paalanen, T. F. Rosenbaum, G. A. Thomas, R. N. Bhatt

Research output: Contribution to journalArticlepeer-review

196 Scopus citations

Abstract

A high-resolution scan of the metal-insulator transition in Si: P at millikelvin temperatures has been obtained by applying uniaxial stress. A sharp, but continuous, metal-insulator transition is resolved, with conductivities below Mott's "minimum" value M. These measurements join smoothly with previous low-resolution experiments, ruling out any discontinuity at M. The reproducible critical behavior disagrees with predictions of existing scaling theories of localization.

Original languageEnglish (US)
Pages (from-to)1284-1287
Number of pages4
JournalPhysical review letters
Volume48
Issue number18
DOIs
StatePublished - 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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