Abstract
A high-resolution scan of the metal-insulator transition in Si: P at millikelvin temperatures has been obtained by applying uniaxial stress. A sharp, but continuous, metal-insulator transition is resolved, with conductivities below Mott's "minimum" value M. These measurements join smoothly with previous low-resolution experiments, ruling out any discontinuity at M. The reproducible critical behavior disagrees with predictions of existing scaling theories of localization.
Original language | English (US) |
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Pages (from-to) | 1284-1287 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 48 |
Issue number | 18 |
DOIs | |
State | Published - May 3 1982 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy