Engineering
Polysilicon
100%
Gate Electrode
100%
Thermal Model
25%
Computer Simulation
25%
Microstructure
25%
Room Temperature
25%
Density Gradient
25%
Gate Oxide
25%
Induced Stress
25%
Rate Proportional
25%
Boundary Element Method
25%
Deposition Temperature
25%
Etch Rate
25%
Common Type
25%
Surface Evolution
25%
Strain Energy Density
25%
Material Science
Film
100%
Silicon Dioxide
100%
Energy Density
100%
Oxide Interface
100%
Boundary Element Method
100%
Keyphrases
Notch Formation
100%
Polysilicon Gate
100%
Electrode Patterning
33%
Silicon Dioxide Films
33%
Semiconductor Microstructure
33%
Chemical Engineering
Polysilicon
100%
Silica
25%