Stress dependence of the metal-insulator transition in doped semiconductors

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Abstract

The single-particle energy bands are calculated for a lattice of donors in many-valley semiconductors with a moderately strong central-cell potential using a pseudopotential constructed by the method of polarized orbitals. The variation of the metal-insulator transition with uniaxial stress is found to be in a direction opposite to that expected for effective-mass donors, as seen experimentally in phosphorus-doped silicon and arsenic-doped germanium.

Original languageEnglish (US)
Pages (from-to)1082-1085
Number of pages4
JournalPhysical Review B
Volume26
Issue number2
DOIs
StatePublished - Jan 1 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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