Abstract
The single-particle energy bands are calculated for a lattice of donors in many-valley semiconductors with a moderately strong central-cell potential using a pseudopotential constructed by the method of polarized orbitals. The variation of the metal-insulator transition with uniaxial stress is found to be in a direction opposite to that expected for effective-mass donors, as seen experimentally in phosphorus-doped silicon and arsenic-doped germanium.
Original language | English (US) |
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Pages (from-to) | 1082-1085 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 26 |
Issue number | 2 |
DOIs | |
State | Published - 1982 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics