Strategies for integration of donor electron spin qubits in silicon

T. Schenkel; J. A. Liddle; J. Bokor; A. Persaud; S. J. Park; J. Shangkuan; C. C. Lo; S. Kwon; S. A. Lyon; A. M. Tyryshkin; I. W. Rangelow; Y. Sarov; D. H. Schneider; J. Ager; R. de Sousa

doi:10.1016/j.mee.2006.01.234

Strategies for integration of donor electron spin qubits in silicon

T. Schenkel, J. A. Liddle, J. Bokor, A. Persaud, S. J. Park, J. Shangkuan, C. C. Lo, S. Kwon, S. A. Lyon, A. M. Tyryshkin, I. W. Rangelow, Y. Sarov, D. H. Schneider, J. Ager, R. de Sousa

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10 Scopus citations

Abstract

Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched ²⁸Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T₂, for ¹²¹Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

Original language	English (US)
Pages (from-to)	1814-1817
Number of pages	4
Journal	Microelectronic Engineering
Volume	83
Issue number	4-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mee.2006.01.234
State	Published - Apr 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Electron spin resonance
Ion implantation
Quantum computing
Single electron transistor

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10.1016/j.mee.2006.01.234

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Schenkel, T., Liddle, J. A., Bokor, J., Persaud, A., Park, S. J., Shangkuan, J., Lo, C. C., Kwon, S., Lyon, S. A., Tyryshkin, A. M., Rangelow, I. W., Sarov, Y., Schneider, D. H., Ager, J., & de Sousa, R. (2006). Strategies for integration of donor electron spin qubits in silicon. Microelectronic Engineering, 83(4-9 SPEC. ISS.), 1814-1817. https://doi.org/10.1016/j.mee.2006.01.234

@article{e3e997089e21498c9c87320a08c31fa0,

title = "Strategies for integration of donor electron spin qubits in silicon",

abstract = "Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.",

keywords = "Electron spin resonance, Ion implantation, Quantum computing, Single electron transistor",

author = "T. Schenkel and Liddle, {J. A.} and J. Bokor and A. Persaud and Park, {S. J.} and J. Shangkuan and Lo, {C. C.} and S. Kwon and Lyon, {S. A.} and Tyryshkin, {A. M.} and Rangelow, {I. W.} and Y. Sarov and Schneider, {D. H.} and J. Ager and {de Sousa}, R.",

note = "Funding Information: This work was supported by NSA under ARO Contract No. MOD707501. Work at LBNL was supported by the U.S. DOE under Contract No. DE-AC02-05CH1123. Work at LLNL was supported by the U. S. DOE under Contract No. DE-AC03-76SF00098. Part of this work was supported by NSF under Grant No. 0404208. Work at Princeton was supported by ARO and ARDA under Contract No. DAAD19-02-1-0040.",

year = "2006",

month = apr,

doi = "10.1016/j.mee.2006.01.234",

language = "English (US)",

volume = "83",

pages = "1814--1817",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "4-9 SPEC. ISS.",

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TY - JOUR

T1 - Strategies for integration of donor electron spin qubits in silicon

AU - Schenkel, T.

AU - Liddle, J. A.

AU - Bokor, J.

AU - Persaud, A.

AU - Park, S. J.

AU - Shangkuan, J.

AU - Lo, C. C.

AU - Kwon, S.

AU - Lyon, S. A.

AU - Tyryshkin, A. M.

AU - Rangelow, I. W.

AU - Sarov, Y.

AU - Schneider, D. H.

AU - Ager, J.

AU - de Sousa, R.

N1 - Funding Information: This work was supported by NSA under ARO Contract No. MOD707501. Work at LBNL was supported by the U.S. DOE under Contract No. DE-AC02-05CH1123. Work at LLNL was supported by the U. S. DOE under Contract No. DE-AC03-76SF00098. Part of this work was supported by NSF under Grant No. 0404208. Work at Princeton was supported by ARO and ARDA under Contract No. DAAD19-02-1-0040.

PY - 2006/4

Y1 - 2006/4

N2 - Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

AB - Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

KW - Electron spin resonance

KW - Ion implantation

KW - Quantum computing

KW - Single electron transistor

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U2 - 10.1016/j.mee.2006.01.234

DO - 10.1016/j.mee.2006.01.234

M3 - Article

AN - SCOPUS:33646053487

SN - 0167-9317

VL - 83

SP - 1814

EP - 1817

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-9 SPEC. ISS.

ER -

Strategies for integration of donor electron spin qubits in silicon

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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