Strategies for integration of donor electron spin qubits in silicon

T. Schenkel, J. A. Liddle, J. Bokor, A. Persaud, S. J. Park, J. Shangkuan, C. C. Lo, S. Kwon, S. A. Lyon, A. M. Tyryshkin, I. W. Rangelow, Y. Sarov, D. H. Schneider, J. Ager, R. de Sousa

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

Original languageEnglish (US)
Pages (from-to)1814-1817
Number of pages4
JournalMicroelectronic Engineering
Issue number4-9 SPEC. ISS.
StatePublished - Apr 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


  • Electron spin resonance
  • Ion implantation
  • Quantum computing
  • Single electron transistor


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