We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO3 substrates and poor crystalline quality SrTiO3 substrates. It is believed that a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO6 octahedra and leading to a metal-insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jun 2 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)