Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO3

R. A. Rao; Q. Gan; C. B. Eom; R. J. Cava; Y. Suzuki; J. J. Krajewski; S. C. Gausepohl; M. Lee

doi:10.1063/1.118741

Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO₃

R. A. Rao, Q. Gan, C. B. Eom, R. J. Cava, Y. Suzuki, J. J. Krajewski, S. C. Gausepohl, M. Lee

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Abstract

We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO₃ deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO₃ substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO₃ substrates and poor crystalline quality SrTiO₃ substrates. It is believed that a strain induced substitution of the small Ru⁴⁺ cations by the larger Ca²⁺ cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO₆ octahedra and leading to a metal-insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures.

Original language	English (US)
Pages (from-to)	3035-3037
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	22
DOIs	https://doi.org/10.1063/1.118741
State	Published - Jun 2 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.118741

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@article{056e6690b8e34468a9398a6c9de6415c,

title = "Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO3",

abstract = "We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO3 substrates and poor crystalline quality SrTiO3 substrates. It is believed that a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO6 octahedra and leading to a metal-insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures.",

author = "Rao, {R. A.} and Q. Gan and Eom, {C. B.} and Cava, {R. J.} and Y. Suzuki and Krajewski, {J. J.} and Gausepohl, {S. C.} and M. Lee",

year = "1997",

month = jun,

day = "2",

doi = "10.1063/1.118741",

language = "English (US)",

volume = "70",

pages = "3035--3037",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO3

AU - Rao, R. A.

AU - Gan, Q.

AU - Eom, C. B.

AU - Cava, R. J.

AU - Suzuki, Y.

AU - Krajewski, J. J.

AU - Gausepohl, S. C.

AU - Lee, M.

PY - 1997/6/2

Y1 - 1997/6/2

N2 - We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO3 substrates and poor crystalline quality SrTiO3 substrates. It is believed that a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO6 octahedra and leading to a metal-insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures.

AB - We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO3 substrates and poor crystalline quality SrTiO3 substrates. It is believed that a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO6 octahedra and leading to a metal-insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=0031548122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031548122&partnerID=8YFLogxK

U2 - 10.1063/1.118741

DO - 10.1063/1.118741

M3 - Article

AN - SCOPUS:0031548122

SN - 0003-6951

VL - 70

SP - 3035

EP - 3037

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO₃

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