Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO3

R. A. Rao, Q. Gan, C. B. Eom, R. J. Cava, Y. Suzuki, J. J. Krajewski, S. C. Gausepohl, M. Lee

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Abstract

We report the observation of both metallic and semiconducting behavior in epitaxial thin films of the metallic oxide CaRuO3 deposited under identical conditions. X-ray diffraction studies showed that while semiconducting films with enlarged unit cells were obtained on single-crystal (100) SrTiO3 substrates, metallic films with lattice parameters close to the bulk material grew on (100) LaAlO3 substrates and poor crystalline quality SrTiO3 substrates. It is believed that a strain induced substitution of the small Ru4+ cations by the larger Ca2+ cations occurs, breaking the conduction pathway within the three-dimensional network of the RuO6 octahedra and leading to a metal-insulator transition. This unique phenomenon, which is not observed in bulk material, can be significant in technologically important epitaxial perovskite oxide heterostructures.

Original languageEnglish (US)
Pages (from-to)3035-3037
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number22
DOIs
StatePublished - Jun 2 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Rao, R. A., Gan, Q., Eom, C. B., Cava, R. J., Suzuki, Y., Krajewski, J. J., Gausepohl, S. C., & Lee, M. (1997). Strain stabilized metal-insulator transition in epitaxial thin films of metallic oxide CaRuO3. Applied Physics Letters, 70(22), 3035-3037. https://doi.org/10.1063/1.118741