Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates

H. Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, J. C. Sturm

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


A study to investigate the strain partitioning of crystalline Si and amorphous SiO2 deposited on crystalline SiGe on a compliant viscous borophosphorosilicate (BPSG) glass was presented. It was observed that the strains in SiGe and Si films changed identically during a high-temperature anneal which softened the BPSG films. The stress balance between the layers confirmed that BPSG was a perfectly compliant substrate and did not exert any force on the layers above it.

Original languageEnglish (US)
Pages (from-to)3853-3855
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - Jun 2 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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