Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates

H. Yin; K. D. Hobart; F. J. Kub; S. R. Shieh; T. S. Duffy; J. C. Sturm

doi:10.1063/1.1578168

Strain partition of Si/SiGe and SiO₂/SiGe on compliant substrates

H. Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, J. C. Sturm

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Abstract

A study to investigate the strain partitioning of crystalline Si and amorphous SiO₂ deposited on crystalline SiGe on a compliant viscous borophosphorosilicate (BPSG) glass was presented. It was observed that the strains in SiGe and Si films changed identically during a high-temperature anneal which softened the BPSG films. The stress balance between the layers confirmed that BPSG was a perfectly compliant substrate and did not exert any force on the layers above it.

Original language	English (US)
Pages (from-to)	3853-3855
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1578168
State	Published - Jun 2 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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AU - Hobart, K. D.

AU - Kub, F. J.

AU - Shieh, S. R.

AU - Duffy, T. S.

AU - Sturm, J. C.

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Strain partition of Si/SiGe and SiO₂/SiGe on compliant substrates

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