A study to investigate the strain partitioning of crystalline Si and amorphous SiO2 deposited on crystalline SiGe on a compliant viscous borophosphorosilicate (BPSG) glass was presented. It was observed that the strains in SiGe and Si films changed identically during a high-temperature anneal which softened the BPSG films. The stress balance between the layers confirmed that BPSG was a perfectly compliant substrate and did not exert any force on the layers above it.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jun 2 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)