Stimulated emission from excitons in a quantum wire laser fabricated by cleaved edge overgrowth

Werner Wegscheider, Loren Pfeiffer, Marc Dignam, Aron Pinczuk, Kenneth West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Quantum wires which form at the T-shaped intersection of two 7 nm wide quantum wells have been embedded in the active region of AlGaAs/ GaAs lasers. The quantum wires whose dimensions can be precisely controlled on a monolayer length scale have been prepared by cleaved edge overgrowth, a molecular beam growth technique which involves regrowth on the cleavage plane of a previously grown multilayer structure. The quantum wire emission wavelength is found to be nearly independent of the optical excitation level.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages401-406
Number of pages6
ISBN (Print)1558992251
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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