Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

Ji Won Oh; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1063/1.1560575

Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

Ji Won Oh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The step edge kinetics driving the formation of atomically flat (110) GaAs surfaces were discussed. These surfaces were fabricated by the cleaved-edge overgrowth method and high temperature growth interrupt annealing. The results show that deposition of slightly less or more than integral causes the appearance of characteristic step edge shapes such as 1-ML-deep pits or 2-to-3-ML-high isolated islands.

Original language	English (US)
Pages (from-to)	1709-1711
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	11
DOIs	https://doi.org/10.1063/1.1560575
State	Published - Mar 17 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1560575

Cite this

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title = "Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces",

abstract = "The step edge kinetics driving the formation of atomically flat (110) GaAs surfaces were discussed. These surfaces were fabricated by the cleaved-edge overgrowth method and high temperature growth interrupt annealing. The results show that deposition of slightly less or more than integral causes the appearance of characteristic step edge shapes such as 1-ML-deep pits or 2-to-3-ML-high isolated islands.",

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AU - Oh, Ji Won

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2003/3/17

Y1 - 2003/3/17

N2 - The step edge kinetics driving the formation of atomically flat (110) GaAs surfaces were discussed. These surfaces were fabricated by the cleaved-edge overgrowth method and high temperature growth interrupt annealing. The results show that deposition of slightly less or more than integral causes the appearance of characteristic step edge shapes such as 1-ML-deep pits or 2-to-3-ML-high isolated islands.

AB - The step edge kinetics driving the formation of atomically flat (110) GaAs surfaces were discussed. These surfaces were fabricated by the cleaved-edge overgrowth method and high temperature growth interrupt annealing. The results show that deposition of slightly less or more than integral causes the appearance of characteristic step edge shapes such as 1-ML-deep pits or 2-to-3-ML-high isolated islands.

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Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

Abstract

All Science Journal Classification (ASJC) codes

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