Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory

Yifei Huang; Bahman Hekmatshoar; Sigurd Wagner; James C. Sturm

doi:10.1889/JSID18.11.879

Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory

Yifei Huang, Bahman Hekmatshoar, Sigurd Wagner, James C. Sturm

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An active-matrix organic light-emitting-diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the thin-film transistor (TFT) that drives the OLED with a non-volatile memory TFT, in a 2-transistor pixel circuit. The threshold voltage of the non-volatile-memory TFT can be changed by applying programming voltage pulses to the gate electrode. This approach eliminates the need for storage capacitors, increases the pixel fill factor, and potentially reduces power consumption. Each pixel can be individually programmed or erased using a standard active-matrix addressing scheme. The programmed image is stored in the display even if power is turned off.

Original language	English (US)
Pages (from-to)	879-883
Number of pages	5
Journal	Journal of the Society for Information Display
Volume	18
Issue number	11
DOIs	https://doi.org/10.1889/JSID18.11.879
State	Published - Nov 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Keywords

AMOLED display
Amorphous silicon
Non-volatile memory
Thin-film transistor

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10.1889/JSID18.11.879

Cite this

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title = "Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory",

abstract = "An active-matrix organic light-emitting-diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the thin-film transistor (TFT) that drives the OLED with a non-volatile memory TFT, in a 2-transistor pixel circuit. The threshold voltage of the non-volatile-memory TFT can be changed by applying programming voltage pulses to the gate electrode. This approach eliminates the need for storage capacitors, increases the pixel fill factor, and potentially reduces power consumption. Each pixel can be individually programmed or erased using a standard active-matrix addressing scheme. The programmed image is stored in the display even if power is turned off.",

keywords = "AMOLED display, Amorphous silicon, Non-volatile memory, Thin-film transistor",

author = "Yifei Huang and Bahman Hekmatshoar and Sigurd Wagner and Sturm, {James C.}",

year = "2010",

month = nov,

doi = "10.1889/JSID18.11.879",

language = "English (US)",

volume = "18",

pages = "879--883",

journal = "Journal of the Society for Information Display",

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T1 - Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory

AU - Huang, Yifei

AU - Hekmatshoar, Bahman

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2010/11

Y1 - 2010/11

N2 - An active-matrix organic light-emitting-diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the thin-film transistor (TFT) that drives the OLED with a non-volatile memory TFT, in a 2-transistor pixel circuit. The threshold voltage of the non-volatile-memory TFT can be changed by applying programming voltage pulses to the gate electrode. This approach eliminates the need for storage capacitors, increases the pixel fill factor, and potentially reduces power consumption. Each pixel can be individually programmed or erased using a standard active-matrix addressing scheme. The programmed image is stored in the display even if power is turned off.

AB - An active-matrix organic light-emitting-diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the thin-film transistor (TFT) that drives the OLED with a non-volatile memory TFT, in a 2-transistor pixel circuit. The threshold voltage of the non-volatile-memory TFT can be changed by applying programming voltage pulses to the gate electrode. This approach eliminates the need for storage capacitors, increases the pixel fill factor, and potentially reduces power consumption. Each pixel can be individually programmed or erased using a standard active-matrix addressing scheme. The programmed image is stored in the display even if power is turned off.

KW - AMOLED display

KW - Amorphous silicon

KW - Non-volatile memory

KW - Thin-film transistor

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Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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